PART |
Description |
Maker |
KS24C010 KS24C021 KS24C011 KS24C020 |
1.024 / 2.048-BIT SERIAL EEPROM 1,024/2,048-bit serial eeprom 1,024 / 2,048位串行EEPROM (KS24C010 / KS24C011 / KS24C020 / KS24C021) 1024/2048-bit serial eeprom
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SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
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IDT72V235L20PFI IDT72V225L20PF IDT72V225L20PFI IDT |
3.3 VOLT CMOS SyncFIFO 256 x 18, 512 x 18, 1,024 x 18, 2,048 x 18, and 4,096 x 18 3.3伏的CMOS SyncFIFO 256 × 1812 × 18,024 × 18,048 × 18,和4,096 × 18 3.3 VOLT CMOS SyncFIFO 256 x 18, 512 x 18, 1,024 x 18, 2,048 x 18, and 4,096 x 18 1K X 18 OTHER FIFO, 12 ns, PQFP64 3.3 VOLT CMOS SyncFIFO 256 x 18, 512 x 18, 1,024 x 18, 2,048 x 18, and 4,096 x 18 3.3伏的CMOS SyncFIFO 256 × 1812 × 181,024 × 18,048 × 18,和4,096 × 18 Dual retriggerable monostable multivibrator with reset 3.3伏的CMOS SyncFIFO 256 × 1812 × 18,024 × 18,048 × 18,和4,096 × 18 3.3 VOLT CMOS SyncFIFO 256 x 18, 512 x 18, 1,024 x 18, 2,048 x 18, and 4,096 x 18 256 X 18 OTHER FIFO, 10 ns, PQFP64 3.3 VOLT CMOS SyncFIFO 256 x 18, 512 x 18, 1,024 x 18, 2,048 x 18, and 4,096 x 18 1K X 18 OTHER FIFO, 10 ns, PQFP64
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Integrated Device Technology, Inc.
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IDT72V201L20J IDT72V201L20JI IDT72V211L20J IDT72V2 |
512 x 9 SyncFIFO, 3.3V 3.3 VOLT CMOS SyncFIFO 256 x 9, 512 x 9, 1,024 x 9, 2,048 x 9, 4,096 x 9 and 8,192 x 9 3.3 VOLT CMOS SyncFIFO⑩ 256 x 9, 512 x 9, 1,024 x 9, 2,048 x 9, 4,096 x 9 and 8,192 x 9 GT 11C 11#16 SKT RECP BOX RM 3.3 VOLT CMOS SyncFIFO 256 x 9/ 512 x 9/ 1/024 x 9/ 2/048 x 9/ 4/096 x 9 and 8/192 x 9 3.3 VOLT CMOS SyncFIFO256 x 9, 512 x 9, 1,024 x 9, 2,048 x 9, 4,096 x 9 and 8,192 x 9 3.3伏的CMOS SyncFIFO56 × 912 × 9,024 × 9,048 × 9,096 × 9,192 × 9 GT 6C 3#4 3#16 SKT RECP WALL 1K X 9 OTHER FIFO, 6.5 ns, PQCC32 GT 7C 7#16S PIN RECP 3.3 VOLT CMOS SyncFIFO??256 x 9, 512 x 9, 1,024 x 9, 2,048 x 9, 4,096 x 9 and 8,192 x 9 GT 8C 8#16 SKT RECP WALL GT 3C 3#16S PIN RECP WALL GT 4C 4#12 PIN PLUG 3.3 VOLT CMOS SyncFIFO?256 x 9, 512 x 9, 1,024 x 9, 2,048 x 9, 4,096 x 9 and 8,192 x 9
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IDT[Integrated Device Technology] Integrated Device Technology, Inc. INTEGRATED DEVICE TECHNOLOGY INC Integrated Device Techn...
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MSM531622F |
1,048,576-Word x 16-Bit or 2,097,152-Word x 8-Bit MASKROM(1M字6位或2M字位掩膜ROM 1,048,576字16位或2097152字8位MASKROM00万字× 16位或200万字× 8位掩膜ROM的字 From old datasheet system
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OKI SEMICONDUCTOR CO., LTD.
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MSM512200L-80SJ MSM512200L-60SJ MSM512200L-60TS-K |
1,048,576-Word X 2-Bit DYNAMIC RAM : FAST PAGE MODE TYPE 1,048,576字2位动态随机存储器:快速页面模式型
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OKI SEMICONDUCTOR CO., LTD.
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FT28C16-20SC FT28C16-20SI |
Parallel EEPRO M 16K (2Kx8)
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Force Technologies Ltd
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AK5322048BW |
1,048,576 Word by 36 Bit CMOS Dynamic Random Access Memory 1,048,576 Word6位CMOS动态随机存取存储器
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Accutek Microcircuit, Corp.
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AK5321024BW |
1,048,576 Word by 32 Bit CMOS Dynamic Random Access Memory 1,048,576 Word2位CMOS动态随机存取存储器
|
Accutek Microcircuit, Corp.
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HM514400ALT-7 HM514400ALZ-6 HM514400ALZ-8 HM514400 |
JT 42C 42#22 SKT WALL RECP 1,048,576-WORD x 4-BIT DYNAMIC RAM 1,048,576字4位动态随机存储器 LJT 37C 37#22D SKT RECP
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Hitachi,Ltd.
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HM514400A HM514400AJ-6 HM514400AJ-7 HM514400AJ-8 H |
1,048,576-word x 4-bid DRAM, 70ns 1,048,576-WORD x 4-BIT DYNAMIC RAM 1,048,576-word x 4-bid DRAM, 60ns 1,048,576-word x 4-bid DRAM, 80ns
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HITACHI[Hitachi Semiconductor]
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AM29F080 AM29F080-85FC |
Am29F080 - 8 Megabit (1.048.576 x 8-Bit) CMOS 5.0 Volt-only. Sector Erase Flash Memory Am29F080 - 8兆(1.048.576 × 8位)的CMOS 5.0伏特只。扇区擦除闪 1M X 8 FLASH 5V PROM, 85 ns, PDSO40
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Laird Technologies, Inc. SPANSION LLC
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